K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W
The K1916 is an N-channel MOSFET transistor designed for high-voltage, high-power applications. It offers a drain-to-source voltage rating of 450V, making it suitable for demanding environments where high voltage tolerance is required. This transistor is ideal for use in power supplies, amplifiers, and other high-performance circuits due to its high-speed switching capabilities.
One of the key features of the K1916 MOSFET is its ability to handle a continuous drain current of 18A at a junction temperature of 25°C. Its low on-resistance (RDS(on)) of 0.3 to 0.45Ω ensures minimal power loss during operation, contributing to its efficiency. Furthermore, its fast switching characteristics, with a rise time of just 100-150ns, make it highly suitable for switching regulators and other dynamic applications.
The K1916 MOSFET offers excellent reliability with minimal lot-to-lot variations, ensuring consistent performance. It also provides robust protection features, including a maximum junction temperature of 150°C and a wide operating temperature range from -55°C to 150°C. With its thermal resistance ratings, the transistor efficiently manages heat dissipation during high-load operations, enhancing its long-term durability.
Features:
- High Drain-Source Voltage: 450V for demanding power applications.
- Fast Switching Speed: Provides efficient performance in dynamic circuits.
- Low On-Resistance: 0.3 to 0.45Ω for minimal power loss.
- Large Continuous Drain Current: 18A at TC = 25°C.
- Wide Temperature Range: Operating temperature range from -55°C to 150°C.
- Reliable Performance: Minimum lot-to-lot variations.
- Efficient Heat Dissipation: Thermal resistance ratings for effective cooling.
Specifications:
| Specification | Details |
|---|---|
| Drain-Source Voltage (VDSS): | 450V |
| Gate-Source Voltage (VGS): | ±30V |
| Drain Current (ID): | 18A at TC = 25°C |
| Power Dissipation (Ptot): | 80W |
| Junction Temperature (Tj): | 150°C |
| Storage Temperature (Tstg): | -55°C to 150°C |
| Thermal Resistance (Rth j-c): | 1.56°C/W |
| Thermal Resistance (Rth j-a): | 30°C/W |
| Gate Threshold Voltage (VGS(th)): | 2.5V to 5V |
| Drain-Source Breakdown Voltage (V(BR)DSS): | 450V |
| On-Resistance (RDS(on)): | 0.3Ω to 0.45Ω |
| Input Capacitance (Ciss): | 1800pF to 2700pF |
| Output Capacitance (Coss): | 270pF to 410pF |
| Rise Time (tr): | 100ns to 150ns |
| Fall Time (tf): | 80ns to 120ns |
Applications:
- Switching Regulators.
- Uninterruptible Power Supplies (UPS).
- Power Amplifiers.
- Power Management Circuits.
- General-Purpose Switching Applications.
Package Contents:
- 1x K1916 N-Channel MOSFET Transistor TO-3PML 450V 18A 80W
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