K817 N-Channel MOSFET Transistor TO-220 60V 26A 35W

Specifications:

• Type Designator: 2SK817
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 35 W
• Maximum Drain-Source Voltage |Vds|: 60 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Drain Current |Id|: 26 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 20 nS
• Drain-Source Capacitance (Cd): 800 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
• Package: TO-220

2SK817 Datasheet