KM41256-12 256k x 1 Bit Dynamic RAM with Page/Nibble Mode Dip IC
The KM41256-12 is a 256K × 1-bit dynamic random-access memory (DRAM) offered in a DIP package. Designed for systems requiring compact, single-bit memory elements, it implements a multiplexed address scheme and standard RAS/CAS control signals to interface with microprocessor and memory-controller architectures. The device is optimized for simple board-level integration and provides straightforward refresh and timing control for dynamic storage.
This DRAM supports both page and nibble access modes to improve sequential read/write efficiency: page mode allows faster successive accesses within a row, while nibble mode permits small multi-bit transfers under controlled timing. Address and control timing are managed using row/column strobes (RAS/CAS), and the device uses standard dynamic refresh techniques to retain data.
Typical uses include microcomputer main memory expansion, buffer stores, and small dedicated memory arrays where single-bit wide DRAMs are aggregated for wider data buses. The DIP package simplifies prototyping and replacement. The KM41256-12’s behavior and electrical characteristics (timings, supply limits, and environmental ratings) are documented in the official datasheet.
Features:
- 256K × 1-bit dynamic RAM organization supporting multiplexed row/column addressing.
- Support for Page Mode to speed sequential row accesses.
- Support for Nibble Mode for small multi-bit bursts.
- Standard RAS/CAS control interface for easy connection to microprocessor memory controllers.
- DIP package for simple insertion and prototyping.
- TTL-compatible control and data pins (as typical for this family).
Specifications:
| Parameter | Symbol | Value | Units / Condition |
|---|---|---|---|
| General Specifications | |||
| Organization | — | 256K x 1 bit | |
| Supply Voltage | VCC | 5.0 ± 10% | V |
| Ground | VSS | 0 | V |
| Refresh | |||
| Data Retention / Refresh | tREF | 4 | ms (for 256 cycles) |
| DC Characteristics | |||
| Output Leakage Current | IOL | -10 to +10 | μA (Output Disabled) |
| Output High Voltage | VOH | ≥ 2.4 | V (I_OH = -5 mA) |
| Output Low Voltage | VOL | ≤ 0.4 | V (I_OL = 4.2 mA) |
| Capacitances | |||
| Input Capacitance (A₀–A₈, D) | C_IN1 | ≤ 7 | pF |
| Input Capacitance (RAS, CAS, W) | C_IN2 | ≤ 10 | pF |
| Output Capacitance (Q) | C_OUT | ≤ 7 | pF |
Applications:
- Microcomputer main memory.
- Buffer memory for peripherals and controllers.
- Small dedicated memory arrays in embedded systems.
- Educational and prototyping use with DIP socketed boards.
Package Contents:
- 1x KM41256-12 256k x 1 Bit Dynamic RAM with Page/Nibble Mode Dip IC
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