M28F101-100K1 CMOS Flash Memory SMD IC
The M28F101-100K1 is a 1 Mb (128K x 8) CMOS Flash Memory IC manufactured by STMicroelectronics. Designed for applications requiring reliable non-volatile storage with fast access times, it operates on a single 5V supply voltage and requires a 12V programming voltage for write operations. It features a 70ns access time, making it suitable for high-speed microprocessor systems. The IC supports byte programming with a typical time of 10µs and chip erase in approximately 1 second. With a minimum of 10,000 erase/program cycles and a low standby current of 100µA maximum, it is energy-efficient for low-power applications. Housed in a 32-pin PLCC (Plastic Leaded Chip Carrier) package, it is ideal for surface-mount technology (SMT) and automated assembly processes. The device is RoHS-compliant, ensuring environmental compatibility.
Features:
- 5V ±10% SUPPLY VOLTAGE.
- 12V PROGRAMMING VOLTAGE.
- FAST ACCESS TIME 70ns.
- BYTE PROGRAMING TIME 10µs typical.
- ELECTRICAL CHIP ERASE in 1s RANGE.
- LOW POWER CONSUMPTION Stand-by Current: 100µA max.
- 10,000 ERASE/PROGRAM CYCLES.
- INTEGRATED ERASE/PROGRAM-STOPTIMER
- OTP COMPATIBLE PACKAGES and PINOUTS
Pinout:
Specifications:
| Specification | Value |
|---|---|
| Memory Size | 1 Mbit (131,072 ×8 bits) |
| Organization | 128 Kbytes × 8 bits |
| Address Pins | 17 (A0–A16) |
| Data Bus Width | 8 bits (DQ0–DQ7) |
| V<sub>CC</sub> Supply | 5.0 V ±10% (4.5 V–5.5 V) |
| V<sub>PP</sub> (Program) | 12.0 V (for erase/program) |
| Access Time | 70 ns (max) |
| Byte Program Time | ~10 µs (typical) |
| Chip Erase Time | ~1 s (typical) |
| Endurance (P/E Cycles) | ≥10,000 cycles |
| Data Retention | ≥10 years |
| Standby Current | ≤100 µA max (TTL CE=V<sub>CC</sub>) |
| Operating Temp. Range | –40 °C to +85 °C (industrial) (extended to +125 °C) |
| Storage Temp. | –65 °C to +150 °C |
| Package Type | 32-pin PLCC |
| Package Dimensions | 14 × 12mm |
Applications:
- Embedded Systems.
- Consumer Electronics.
Package Include:
- 1 x M28F101-100K1.
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