General Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.
This device is for PFC, UPS & Inverter applications
Features
- High Speed Switching & Low Power Loss
- VCE(sat) = 2.0V @ IC = 40A
- High Input Impedance
- trr = 100ns (typ.)
- Ultra Soft, fast recovery anti-parallel diode
- Ultra narrowed VF distribution control
- Positive Temperature coefficient for easy paralleling
Specifications
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1200 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
|
Collector current |
TC=25°C |
IC |
80 | A |
| TC=100°C | 40 | A | ||
| Pulsed collector current, pulse time limited by Tjmax | ICM | 160 | A | |
| Diode forward current @ TC = 100°C | IF | 40 | A | |
| Diode pulsed current, Pulse time limited by Tjmax | IFM | 160 | A | |
|
Power dissipation |
TC=25°C |
PD |
357 | W |
| TC=100°C | 142 | W | ||
| Short circuit withstand time
VCE = 600V, VGE = 15V, TC = 150°C |
tsc | 10 | μs | |
| Operating Junction and storage temperature range | TJ, Tstg | -55~150 | °C | |
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