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MD60N30 60A 300V N-Channel MOSFET TO-3P
MD60N30 60A 300V N-channel MOSFET with low RDS(on) and high efficiency, designed for high-power switching applications and robust performance.
90.00 EGP
Buy NowMD60N30 60A 300V N-Channel MOSFET TO-3P
The MD60N30 60A 300V N-Channel MOSFET TO-3P is a high-performance power transistor designed for efficient switching and power management applications. Based on advanced high-voltage MOSFET technology, this device delivers excellent electrical performance, low conduction losses, and high reliability in demanding environments.
Features:
- N-channel enhancement mode MOSFET.
- High drain-source voltage rating of 300V.
- Continuous drain current up to 60A.
- Low RDS(on) for reduced conduction losses.
- Fast switching characteristics for high efficiency.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 300V |
| Gate-Source Voltage | ±30V |
| Continuous Drain Current (T_C=25°C) | 60A |
| Continuous Drain Current (T_C=100°C) | 40A |
| Pulsed Drain Current | 200A |
| Static Drain-Source On-Resistance | 0.042Ω typ / 0.056Ω max |
| Gate Threshold Voltage | 2.9V to 4.1V |
| Input Capacitance | 4438pF typ |
| Power Dissipation | 658W |
| Junction Temperature Range | -55°C to +150°C |
| Package | TO-3P |
Pin Configuration:
Applications:
- Switch mode power supplies and adapters.
- DC-DC converters and high-frequency inverters.
- Motor control circuits and industrial power systems.
- Battery chargers and uninterruptible power supplies.
- Solar inverters and welding equipment.
- High-efficiency offline AC-DC power designs.
Package Include:
1x MD60N-30 60A 300V N-Channel MOSFET TO-3P.
Datasheet:
MD60N30
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