MJ1001 NPN Darlington Power Transistor TO-3
MJ1001 NPN Darlington Power Transistor 80V, high current gain for switching and linear amplifier applications.
195.00 EGP
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The MJ1001 NPN Darlington Power Transistor is a high-performance silicon power transistor designed for demanding switching and amplification applications. This device integrates two transistors in a monolithic Darlington configuration, providing exceptionally high DC current gain and improved current amplification compared with standard bipolar transistors.
Features:
- NPN Darlington configuration for extremely high current gain.
- Collector-emitter breakdown voltage up to 80V.
- Maximum collector current up to 10A.
- High DC current gain typically ≥1000.
- Power dissipation capability up to 90W with proper heat sinking.
- Low collector-emitter saturation voltage for efficient switching.
Specifications:
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage | 80VDC |
| Collector-Base Voltage | 80VDC |
| Emitter-Base Voltage | 5VDC |
| Collector Current Continuous | 10A |
| Base Current | 0.1A |
| Power Dissipation | 90W |
| Thermal Resistance Junction to Case | 1.94°C/W |
| DC Current Gain | 1000min@IC=3A,VCE=3V |
| Collector-Emitter Saturation Voltage | 2Vmax@IC=3A |
| Base-Emitter On Voltage | 2.5Vmax@IC=3A,VCE=3V |
| Operating Temperature | -55°C-200°C |
| Package Type | TO-3 |
Pin Configuration:
Applications:
- Output stages in audio amplifiers for high-power sound systems.
- General-purpose power switching in industrial control circuits.
- Complementary amplifier designs for balanced signal processing.
- Linear power regulation in electronic devices requiring high gain.
- Driver circuits for motors and relays in automation systems.
Package Include:
1x MJ1001 NPN Darlington Power Transistor TO-3.
Datasheet:
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