MJE340 NPN BJT Transistor 300V 500mA TO-126

MJE340: 300 V, 0.5 A NPN BJT in TO‑126 package, ideal for medium‑power switching and amplifier applications.

7.50 EGP

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SKU:34963000969310
MJE340 NPN BJT Transistor 300V 500mA TO-126

The MJE340 is a silicon planar NPN bipolar junction transistor designed for medium‑power linear and switching applications. It withstands high voltages (up to 300 V) while handling collector currents up to 500 mA. Packaged in a TO‑126 (SOT‑32) case, it pairs complementarily with the PNP MJE350 for push–pull stages and amplifier designs.

Features
  • High voltage capability: 300 V collector–emitter and collector–base ratings
  • Medium current rating: 0.5 A continuous collector current
  • Complementary pairing: Matches with MJE350 PNP transistor for push–pull designs
  • Standard through‑hole TO‑126 package for easy PCB mounting
  • SOT‑32 (TO‑126) package simplifies heat sinking and industrial assembly

Specifications

Absolute Maximum Ratings

Parameter Symbol Value Unit
Collector–Base Voltage VCBO 300 V
Collector–Emitter Voltage VCEO 300 V
Emitter–Base Voltage VEBO 3 V
Continuous Collector Current IC 0.5 A
Total Power Dissipation (Tc = 25 °C) PTOT 20.8 W
Storage Temperature Tstg –65 to +150 °C
Junction Temperature TJ –65 to +150 °C

Thermal Data

Parameter Symbol Value Unit
Thermal Resistance, Junction–to–Case RθJC 6 °C/W

Electrical Characteristics (Tcase = 25 °C unless noted)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector cut‑off current ICBO VCB=300 V, IE=0 100 µA µA
Emitter cut‑off current IEBO VEB=3 V, IC=0 100 µA µA
Collector–Emitter sustaining voltage VCEO(sus) IC=1 mA, IB=0 300 V
Emitter–Base on voltage VBE(on) IC=50 mA, VCE=10 V 1 V
Collector–Emitter saturation voltage VCE(sat) IC=100 mA, IB=10 mA 0.5 V
DC current gain hFE IC=50 mA, VCE=10 V 30 240

 

Applications
  • Linear power supplies and regulators
  • Audio amplifier output stages
  • Motor control and driver circuits
  • Industrial switching equipment
  • High‑voltage amplifier stages
DataSheet

 

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