MJE350 PNP Transistor 500mA, 300V, 3-Pin SOT-32
The MJE350 is a silicon planar PNP power transistor, designed for medium‑power linear and switching applications. Packaged in a 3‑pin SOT‑32 (TO‑126) case, it offers symmetrical performance for push‑pull stages and complementary amplifier designs.
Features
- PNP planar silicon power transistor
- Complementary to the MJE340 NPN device
- High voltage capability: 300 V collector–emitter
- Collector current up to 0.5 A
- Low saturation voltage for efficient switching
- Standard SOT‑32 (TO‑126) package for easy mounting
Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector–Base Voltage (IE = 0) | VCBO | 300 | V |
| Collector–Emitter Voltage (IB = 0) | VCEO | 300 | V |
| Emitter–Base Voltage (IC = 0) | VEBO | 3 | V |
| Collector Current | IC | 0.5 | A |
| Total Dissipation (Tc = 25°C) | PTOT | 20.8 | W |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | -65 to +150 | °C |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector Cut-off Current (IE = 0) | ICBO | VCB = 300 V | 100 µA | |||
| Emitter Cut-off Current (IC = 0) | IEBO | VEB = 3 V | 100 µA | |||
| Collector–Emitter Sustaining Voltage (IB = 0) | VCE(sus) | IC = 1 mA, pulse | 300 | V | ||
| Base–Emitter On Voltage | VBE(on) | IC = 50 mA, VCE = 10 V | 0.9 | 1.0 | 1.1 | V |
| Collector–Emitter Saturation Voltage | VCE(sat) | IC = 100 mA, IB = 10 mA | 0.5 | V | ||
| DC Current Gain | hFE | IC = 50 mA, VCE = 10 V | 30 | 135 | 240 |
Applications
- Industrial linear amplifiers
- Switching power supplies
- Complementary push‑pull output stages
- Motor control circuits
- General purpose medium‑power switching
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