MMBT3904LT1G 40V 40@0.1mA,1.0V 225mW 200mA NPN SOT-23 Bipolar Transistor SMD

MMBT3904LT1G 40V 40@0.1mA,1.0V 225mW 200mA NPN SOT-23 Bipolar Transistor SMD

The MMBT3904L-T1G is a high-performance NPN transistor designed for general-purpose switching and amplification applications. This component is housed in a compact SOT-23 package, making it ideal for space-constrained designs in automotive, consumer electronics, and industrial systems. With a collector-emitter voltage rating of 40V and a collector current of up to 200mA, the MMBT3904LT1G provides reliable performance even under moderate electrical stress. It features a low collector-emitter saturation voltage and a high current gain, making it suitable for low-power, low-noise applications that require precision switching and signal amplification.

Features:

• NPN bipolar junction transistor in compact SOT-23 surface-mount package.
• Maximum collector-emitter voltage: 40V.
• Maximum continuous collector current: 200mA.
• Maximum power dissipation: 225mW.
• High current gain with low saturation voltage.

Specifications:

Pin Configuration:

Footprint:

Applications:

• General-purpose switching and amplification.
• Signal processing in audio and communication devices.
• Automotive electronics, especially for low-power signal switching.
• Consumer electronics such as radios and sensors.
• Compact electronic devices requiring efficient low-voltage operation.

Datasheet:

MMBT3904LT1G