N-Channel MOSFET Transistor 2SK357
The 2SK357 is an N-channel enhancement-mode power MOSFET designed for robust performance in high-voltage, high-speed switching environments. It is built using advanced silicon semiconductor technology, emphasizing reliability and efficiency in demanding industrial and power management applications. As an electrostatic-sensitive device, it requires careful handling, reflecting its sophisticated internal MOS structure designed for precision and durability.
Engineered to handle significant power levels, the 2SK357 offers a balance of high current capability and low conduction losses. Its design focuses on minimizing on-state resistance, which contributes to reduced heat generation and improved efficiency during operation. The transistor supports fast switching speeds, making it suitable for applications where rapid turn-on and turn-off are critical. The enhancement-mode operation allows for easy control with a positive gate voltage, simplifying drive circuit design.
The 2SK357 is characterized by its ability to operate under high voltage conditions while maintaining low leakage currents, ensuring stability and safety in various circuits. Its construction supports effective thermal management, which is crucial for maintaining performance in continuous and pulse-load scenarios. The device is tailored for use in environments that require a dependable switching component capable of withstanding electrical stresses and variable load conditions.
Features:
- Low Drain-Source ON Resistance.
- High Forward Transfer Admittance.
- High Drain Current capability.
- Low Leakage Current.
- Enhancement-Mode operation.
Specifications:
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 150 | V | |||
| Gate-Source Voltage | VGSS | ±120 | V | |||
| Drain Current (DC) | I_D | 5 | A | |||
| Drain Current (Pulse) | I_DP | 8 | A | |||
| Drain Power Dissipation | P_D | T_c=25°C | 40 | W | ||
| Gate Threshold Voltage | V_th | V_DS=10V, I_D=1mA | 1.5 | 3.5 | V | |
| Drain-Source ON Resistance | R_DS(on) | I_D=3A, V_GS=10V | 0.6 | 0.9 | Ω | |
| Forward Transfer Admittance | |Y_fs| | V_DS=10V, I_D=3A | 0.8 | 1.8 | S | |
| Turn-on Time | t_on | 80 | ns | |||
| Turn-off Time | t_off | 120 | ns |
Applications:
- High-Speed Switching Applications.
- High-Voltage Switching Applications.
- DC-DC Converters.
- Motor Drive Applications.
- Solenoid Drive Applications.
Package Contents:
- 1x N-Channel 2SK357 MOSFET Transistor
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