| Manufacturer | Nexperia |
| Mfr. Part # | NHDTC123JTR |
| Package | SOT-23(TO-236) |
| Datasheet | Nexperia NHDTC123JTR |
| Description | 100@10mA,5V 1 NPN – Pre Biased 250mW 100mA 80V 100nA SOT-23(TO-236) Digital Transistors ROHS |
Specifications
| Attribute | Value |
| Category | Triode/MOS Tube/Transistor/Digital Transistors |
| Datasheet | Nexperia NHDTC123JTR |
| RoHS | |
| DC Current Gain (hFE@Ic, Vce) | 100@10mA,5V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 100mV@500uA,10mA |
| Transistor Type | 1 NPN – Pre Biased |
| Transition Frequency (fT) | 170MHz |
| Power Dissipation (Pd) | 250mW |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Collector Cut-Off Current (Icbo) | 100nA |
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