P55N10 MOSFET Transistor
The P55N10 MOSFET Transistor is a premium N-Channel enhancement mode power field-effect transistor, meticulously engineered using advanced planar stripe and DMOS technology. This sophisticated manufacturing process has been specifically tailored to minimize on-state resistance while delivering superior switching performance. Rated for a substantial continuous drain current of 55A and a drain-to-source breakdown voltage of 100V, this device is built to withstand high-energy pulses in avalanche and commutation modes, ensuring rugged reliability in demanding electronic circuits.
Features:
- 55A continuous drain current and 100V drain-source voltage.
- Low on-resistance of 0.026Ω for minimal power loss.
- Low gate charge of 75nC for efficient switching.
- Fast switching with rise time 250ns and fall time 140ns.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current | 55A |
| Pulsed Drain Current | 220A |
| Power Dissipation | 155W |
| On-Resistance | 0.026Ω |
| Gate Threshold Voltage | 2.0Vto4.0V |
| Input Capacitance | 2730pF |
| Output Capacitance | 830pF |
| Reverse Transfer Capacitance | 170pF |
| Total Gate Charge | 98nC |
| Diode Forward Voltage | 1.5V |
| Reverse Recovery Time | 100ns |
| Thermal Resistance Junction-to-Case | 0.97°C/W |
Pin Configuration:
Applications:
- Audio amplifiers for high-fidelity sound systems.
- High-efficiency DC/DC converters in power supplies.
- DC motor control in automation and robotics.
- Switching applications in low-voltage circuits.
- Bridge configurations for power management.
Package Include:
1x P55N10 MOSFET Transistor.
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