P75N06 N-Channel MOSFET Transistor
The P75N06 N-Channel MOSFET Transistor is a robust power semiconductor device engineered for efficient switching and amplification in a variety of electronic circuits. As an N-channel enhancement-mode MOSFET, it operates by controlling the flow of current between the drain and source terminals through the application of a voltage to the gate. This transistor excels in applications requiring high current capability and low on-resistance, making it a versatile component in modern electronics. With a drain-source breakdown voltage of 60V, it can handle moderate voltage levels while supporting continuous drain currents up to 75A at 25°C case temperature, ensuring it performs reliably under demanding conditions.
Features:
- High current capability for demanding power applications.
- Drain-source voltage rating of 60V for moderate voltage handling.
- Fast switching speed to minimize power losses.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 60 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Drain Current-continuous (ID) @ Tc=25°C | 75 A |
| Pulse Drain Current (ID(puls)) | 300 A |
| Total Dissipation (Ptot) @ Tc=25°C | 150 W |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -55 °C ~ 150 °C |
| Drain-Source Breakdown Voltage (V(BR)DSS) (min) | 60 V |
| Gate Threshold Voltage (VGS(th)) (min) | 2.0 V |
| Thermal Resistance, Junction to Case (Rth j-c) (max) | 1.67 °C/W |
| Drain-Source On-Resistance (RDS(on)) (max) | 0.014 Ω |
| Rise Time (tr) (max) | 270 ns |
| Turn-on Delay Time (td(on)) (max) | 1300 ns |
Pin Configuration:
Applications:
- Power Regulators and switching power supplies.
- High current, high speed switching circuits.
- Solenoid and relay drivers.
- Motor control and bridge circuits.
- General electronic equipment requiring efficient power management.
Package Include:
1x P75N06 N-Channel MOSFET Transistor
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