Power IGBT Transistor G80N60 TO-247 600V 80A

Power in Motion: G80N60 IGBT Transistor for High-Efficiency Switching

Features:

• High-Speed Switching: Enables rapid operation with minimal energy loss.
• Low Saturation Voltage: VCE(sat) of 2.1V at 40A collector current.
• High Input Impedance: Simplifies drive requirements.
• Integrated Fast Recovery Diode: Reverse recovery time (trr) of 50ns.

Specifications:

• Collector-Emitter Breakdown Voltage (VCE(sus)): 600V.
• Gate-Emitter Threshold Voltage (VGE(th)): 6V.
• Maximum Collector Current (IC): 80A at 25°C.
• Maximum Gate-Emitter Voltage (VGE): ±20V.
• Thermal Resistance Junction-to-Case (RθJC): 0.5°C/W.
• Operating Junction Temperature (TJ): -55°C to +150°C.

Applications:

• AC and DC motor controls.
• General-purpose inverters.
• Robotics and servo controls.

Document:

Data sheet