SEMIKRON SKKT 132/16E Thyristor Module 1.6kV 130A
SEMIKRON SKKT 132/16E is a 1.6kV, 130A dual thyristor module with ceramic insulation, hard-soldered design, and UL approval for industrial power control.
2,350.00 EGP
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The SEMIKRON SKKT 132/16E is a dual‐thyristor module housed in the robust SEMIPACK 2 package, designed for high‐power industrial conversion. It integrates two silicon‐controlled rectifiers (SCRs) on a shared copper baseplate, which is electrically isolated from the heatsink by an aluminium‐oxide (Al₂O₃) ceramic layer. This construction provides excellent thermal conductivity and withstands high voltage stress. The semiconductor chips are bonded to the substrate with hard‐soldering, ensuring superior mechanical strength and reliable operation under repeated thermal cycling.
Each SCR is rated for a repetitive peak reverse and forward blocking voltage of 1 600 V and delivers an average on‐state current of 130 A at 80 °C case temperature. The two devices share a common cathode terminal but feature separate anode and gate connections, allowing flexible bridge or dual‐SCR configurations. Top‐side power terminals minimize stray inductance, while front‐facing gate pins facilitate straightforward triggering circuitry.
The module is UL‐recognized (File No. E 63 532) and mounts via M6 screws to standard heatsinks (5 Nm torque), with terminal torque up to 3 Nm. Operating junction temperatures span −40 °C to +130 °C, making it ideal for demanding applications such as traction drives, welding power supplies, and motor control systems.
Features:
- Aluminium‐oxide ceramic–insulated copper baseplate for high thermal transfer and electrical isolation.
- Hard‐soldered chip‐to‐substrate joints for enhanced mechanical and thermal‐cycling reliability.
Specifications:
| Parameter | Value | Notes |
|---|---|---|
| Average on‐state current, ITAV: | 130 A | Tcase = 80 °C |
| Repetitive peak blocking voltage, VRRM/DRM: | 1 600 V | – |
| Surge on‐state current, ITSM: | 1 900 A | 10 ms; Tvj = 130 °C |
| I²t (surge rating): | 18 000 A²·s | 8.3…10 ms; Tvj = 130 °C |
| Gate trigger voltage, VGT: | ≥ 3 V | Tvj = 25 °C (d.c.) |
| Gate trigger current, IGT: | ≥ 150 mA | Tvj = 25 °C (d.c.) |
| On‐state threshold voltage, VT(TO): | 0.9 V (typ.), 1.65 V (max) | IT = 300 A |
| On‐state slope resistance, rT: | ≤ 2.0 mΩ | Tvj = 130 °C |
| Off‐state leakage current, ID/R: | ≤ 20 mA | VDRM, Tvj = 130 °C |
| Thermal resistance, Rth(j-c): | 0.15 °C/W per module | Tvj = 130 °C |
| Thermal resistance, Rth(c-h): | 0.10 °C/W per module | – |
| Junction temperature range, Tvj: | –40 °C … +130 °C | – |
| Isolation voltage (Visol): | 3 600 V AC to heatsink | 1 s, r.m.s. |
| Mounting torque (heatsink / terminals): | 5 Nm / 3 Nm | ± 15 % |
| Module weight: | 120 g | – |
Dimensions of thyristor modules SKKT 132/16E:
Applications:
- Traction drives.
- Welding power supplies.
- Industrial motor control.
- Power inverters and converters.
Package Contents:
- 1x SEMIKRON SKKT 132/16E Thyristor Module 1.6kV 130A
SEMIKRON SKKT 132/16E Documents:
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