SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-3P
High-power SGT40N60FD2 IGBT transistor with 600V, 80A, and 380W ratings in a TO-3P package, ideal for industrial and switching applications.
90.00 EGP
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The SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-3P is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications requiring high efficiency and low conduction loss. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A, it offers outstanding performance for high-power applications. This TO-3P package IGBT features fast switching speeds and a low VCE(sat) of 1.8V at 40A, making it ideal for use in welding converters, uninterruptible power supplies (UPS), boost choppers, and air conditioning systems. It also provides a maximum power dissipation of 380W and operates reliably across a wide temperature range of -55°C to 150°C.
Features
- 600V collector-emitter voltage rating.
- 80A continuous collector current at 25°C.
- Low VCE(sat) of 1.8V at 40A for efficient operation.
- Fast switching capability with 88ns rise time.
- High input impedance for minimal gate drive requirements.
- Total gate charge of 100nC for rapid switching.
- Robust TO-3P package for effective thermal management.
- Wide operating temperature range from -55°C to 150°C.
Specifications
| SYMBOL | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| BVCE | Collector to Emitter Breakdown Voltage | VGE = 0V, IC = 100μA | 600 | V | ||
| ICES | C-E Leakage Current | VCE = 600V, VGE = 0V | 200 | μA | ||
| IGES | G-E Leakage Current | VGE = 20V, VCE = 0V | ±500 | nA | ||
| VGE(th) | G-E Threshold Voltage | IC = 250μA, VCE = VGE | 4 | 5 | 6.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | IC = 40A, VGE = 15V | 1.8 | 2.7 | ||
| IC = 40A, VGE = 15V, TC = 120°C | 2.5 | |||||
| Cies | Input Capacitance | VCE = 30V, VGE = 0V, f = 1MHz | 1850 | pF | ||
| Coes | Output Capacitance | 190 | ||||
| Cres | Reverse Transfer Capacitance | 50 | ||||
| Td(on) | Turn-On Delay Time | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, Inductive Load | 16 | ns | ||
| Tr | Rise Time | 88 | ||||
| Td(off) | Turn-Off Delay Time | 110 | ||||
| Tf | Fall Time | 96 | ||||
| Eon | Turn-On Switching Loss | 1.8 | mJ | |||
| Eoff | Turn-Off Switching Loss | 0.8 | ||||
| Est | Total Switching Loss | 2.6 | ||||
| Qg | Total Gate Charge | VCE = 300V, IC = 40A, VGE = 15V | 100 | nC | ||
| Qge | Gate to Emitter Charge | 11 | ||||
| Qgc | Gate to Collector Charge | 52 |
NOTE: for maximum ratings and further specifications, check the full SGT40N60FD2 datasheet in the documents at the end of this page.
Applications
- Welding converters.
- Uninterruptible power supplies (UPS).
- Boost choppers.
- Air conditioning systems.
- Induction heating equipment.
- Switched-mode power supplies (SMPS).
- Power factor correction (PFC) circuits.
Package Contents
- 1x SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-3P.
Documents
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