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SS8050 Y1 Bipolar Transistors – BJT SMD 25V 300mW 200@100mA,1V 1.5A NPN SOT-23

1.50 EGP

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Availability: In Stock
SKU:3496300072507
Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
Mfr. Part # SS8050
Package SOT-23
Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. SS8050
Description 25V 300mW 200@100mA,1V 1.5A NPN SOT-23 Bipolar Transistors – BJT ROHS
Specifications
Attribute Value
Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT
Datasheet  Jiangsu Changjing Electronics Technology Co., Ltd. SS8050
RoHS  
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 25V
Power Dissipation (Pd) 300mW
DC Current Gain (hFE@Ic,Vce) 200@100mA,1V
Collector Current (Ic) 1.5A
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@800mA,80mA
Transistor Type NPN
Operating Temperature +150℃@(Tj)

 

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