STF24N60M2 N-Channel MOSFET Transistor 600V 18A TO-220FP
The STF24N60M2 is an N-channel Power MOSFET developed using MDmesh M2 technology. Its strip layout and improved vertical structure provide low on-resistance and optimized switching characteristics, making it ideal for demanding high-efficiency converters.
Features
- Extremely low gate charge
- Excellent output capacitance profile
- 100% avalanche tested
- Zener-protected
- VDS @ TJmax: 650 V
- RDS(on) max: 190 mΩ
- ID: 18 A
Specifications
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| Vgs | Gate-source voltage | ±25 | V |
| Id (1) | Drain current (continuous) at Tc = 25 °C | 18 | A |
| Id (1) | Drain current (continuous) at Tc = 100 °C | 12 | A |
| IdM (2) | Drain current (pulsed) | 72 | A |
| PTOT | Total power dissipation at Tc = 25 °C | 30 | W |
| dv/dt (3) | Peak diode recovery voltage slope | 15 | V/ns |
| dv/dt (4) | MOSFET dv/dt ruggedness | 50 | V/ns |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) | 2.5 | kV |
| Tstg | Storage temperature range | -55 to 150 | °C |
| Tj | Operating junction temperature range | -55 to 150 | °C |
Applications
- Switching applications
- LCC converters
- Resonant converters
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