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STP75NF75 N-Channel MOSFET Transistor 75V 9.5mΩ 80A TO-220
STP75NF75: N-channel 75V, 80A, 0.0095Ω STripFET™ II Power MOSFET. Designed for minimal gate charge in high-efficiency switching applications.
35.00 EGP
Buy NowSTP75NF75 N-Channel MOSFET Transistor 75V 9.5mΩ 80A TO-220
The STP75NF75 is an N-channel 75V, 80A Power MOSFET from STMicroelectronics. It is built using the unique STripFET™ II process, which is specifically designed to minimize input capacitance and gate charge.
This design makes it an excellent choice as the primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters, particularly for Telecom and Computer applications. It is also well-suited for any application that requires low gate drive power.
Features
- Technology: STripFET™ II Power MOSFET
- Low On-Resistance
- Low Gate Charge
- High dv/dt
- Robustness: 100% avalanche tested
Specifications
| Parameter | Symbol | Value | Conditions / Notes |
|---|---|---|---|
| General Characteristics | |||
| Drain-Source Voltage | VDS | 75 V | |
| Continuous Drain Current | ID | 80 A | at TC=25°C |
| Static Drain-Source On-Resistance (Max) | RDS(on) | 0.0095 Ω | at VGS=10V, ID=40A |
| Absolute Maximum Ratings (at TC=25°C) | |||
| Drain-Source Voltage (VGS=0) | VDS | 75 V | |
| Gate-Source Voltage | VGS | ±20 V | |
| Continuous Drain Current | ID | 80 A | at TC=25°C |
| Continuous Drain Current | ID | 70 A | at TC=100°C |
| Pulsed Drain Current | IDM | 320 A | Pulse width limited by SOA |
| Total Power Dissipation | PTOT | 300 W | at TC=25°C |
| Operating Junction Temperature | TJ | -55 to 175 °C | |
| Single Pulse Avalanche Energy | EAS | 700 mJ | Starting TJ=25°C, ID=40A, VDD=37.5V |
| Thermal Data | |||
| Thermal Resistance Junction-Case (Max) | RthJC | 0.5 °C/W | Applies to TO-220 package |
| Thermal Resistance Junction-Ambient (Max) | RthJA | 62.5 °C/W | Applies to TO-220 package |
| Electrical Characteristics (at TC=25°C unless noted) | |||
| Gate Threshold Voltage | VGS(th) | 2V (Min), 3V (Typ), 4V (Max) | VDS=VGS, ID=250μA |
| Total Gate Charge | Qg | 117 nC (Typ), 160 nC (Max) | VDD=60V, ID=80A, VGS=10V |
| Input Capacitance | Ciss | 3700 pF (Typ) | VDS=25V, f = 1 MHz, VGS=0 |
| Output Capacitance | Coss | 730 pF (Typ) | |
| Reverse Transfer Capacitance | Crss | 240 pF (Typ) | |
| Switching Times (Typical values) | |||
| Turn-on Delay Time | td(on) | 25 ns | VDD=37.5V, ID=45A, RG=4.7Ω, VGS=10V |
| Rise Time | tr | 100 ns | |
| Turn-off Delay Time | td(off) | 66 ns | |
| Fall Time | tf | 30 ns | |
Applications
- General high-frequency switching applications
- Primary switch in high-efficiency DC-DC converters
- Telecom and computer power supplies
- Any application requiring low gate drive power
DataSheet
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