STU417S 40V 40A 30W 21mΩ 10V,15A 1.1V 1 P-Channel TO-252 MOSFETs Transistor SMD

Parameter Value
Manufacturer: MSKSEMI
Mfr. Part: STU417S
Package: TO-252
Datasheet: STU417S
Description:

40V 40A 30W 21mΩ 10V,15A 1.1V 1 P-Channel TO-252 MOSFETs

40.00 EGP

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Availability: In Stock
SKU:3496300123834
STU417S 40V 40A 30W 21mΩ 10V,15A 1.1V 1 P-Channel TO-252 MOSFETs Transistor SMD

The STU417S is a P-Channel MOSFET designed with advanced trench technology, offering a combination of high performance and efficient power management. This transistor is suitable for various power management and switching applications. It ensures low on-resistance (RDS(ON)) and low gate charge, providing efficient operation even under demanding conditions.

Its versatile operating range allows for smooth performance with gate voltages as low as 4.5V. The STU417S is ideal for use in battery protection systems, where its robust features ensure optimal power control. Additionally, it has been engineered to work well in systems requiring minimal energy loss and fast switching, making it a reliable component in modern power electronics.

This MOSFET’s design supports high current capabilities, with a continuous drain current of up to 50A at room temperature, providing stability in various environmental conditions. The device’s compact TO-252 package makes it easy to integrate into space-constrained applications, and its performance characteristics make it an excellent choice for load switches, power supplies, and other similar applications.

Features:
  • Low On-Resistance (RDS(ON)): Achieves less than 13mΩ at VGS = 10V, ensuring reduced conduction losses.
  • Gate Charge: Minimal gate charge enables efficient switching, which is crucial for high-speed operations.
  • Low Gate Threshold Voltage: Gate threshold voltage ranges from -1.0V to -2.5V, enhancing its suitability for low-voltage operations.
  • High Current Handling: Can handle up to 50A continuous drain current at 25°C, ensuring reliable performance under high loads.
  • Compact TO-252 Package: The small package size makes it suitable for compact electronic designs.
  • Advanced Trench Technology: This ensures excellent performance and thermal stability in switching applications.
Specifications:
Parameter Value
Drain-Source Voltage (VDS): -40V
Continuous Drain Current (ID): -50A @ 25°C, -31A @ 100°C
Pulsed Drain Current (IDM): -200A
Power Dissipation (PD): 55W
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 10.5mΩ @ VGS=10V, ID=16A
Gate-Threshold Voltage (VGS(th)): -1.0V to -2.5V
Gate Charge (Qg): 28nC
Input Capacitance (Ciss): 3050pF
Output Capacitance (Coss): 282pF
Reverse Transfer Capacitance (Crss):      230pF
Thermal Resistance (RθJC): 2.27°C/W
Pinout Diagram:

Footprint Diagram:

Applications:
  • Battery Protection.
  • Load Switches.
  • Uninterruptible Power Supplies (UPS).
Package Contents:
  • 1x STU417S 40V 40A 30W 21mΩ 10V,15A 1.1V 1 P-Channel TO-252 MOSFETs Transistor SMD

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