Description
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
All Features
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
Specifications
| Attribute | Value |
| Category | Triode/MOS Tube/Transistor/MOSFETs |
| Datasheet | STMicroelectronics STW4N150 |
| RoHS | |
| Drain Source Voltage (Vdss) | 1.5kV |
| Continuous Drain Current (Id) | 4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7Ω@10V,2A |
| Power Dissipation (Pd) | 160W |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | N Channel |
| Input Capacitance (Ciss@Vds) | 1300pF@25V |
| Total Gate Charge (Qg@Vgs) | 50nC@10V |
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