Tip122 5A 100V NPN Darlington Power Transistor TO-220
TIP122 is a 5A, 100V NPN Darlington power transistor in a TO-220 package, ideal for high-power switching, motor control, and amplifier applications.
9.00 EGP
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The TIP122 is a monolithic NPN Darlington power transistor housed in a TO-220AB package, engineered to deliver high current amplification in a compact, medium-power format. Internally, it consists of two NPN transistor stages fabricated on a single silicon die using planar “base-island” technology, which ensures tight coupling between elements and minimizes parasitic resistance. A pair of integrated base-emitter resistors provides a defined bias path that accelerates turn-off and prevents latch-up, giving the device fast switching characteristics despite its high gain topology.
Thermal management is achieved by bonding the die directly to the metal mounting tab of the TO-220AB package, allowing efficient heat transfer to an external heatsink. The package’s exposed backplate serves as the collector terminal, while its three leads provide connections for base, emitter, and an auxiliary collector pin that helps evenly distribute current and heat under heavy load. This design supports robust operation over a broad junction temperature range (–65 °C to +150 °C), making the TIP122 suitable for demanding power amplification and switching tasks.
Although optimized for ease of use in amplifier and low-speed switching circuits, the TIP122’s Darlington configuration yields exceptionally high DC current gain (on the order of thousands) while maintaining a relatively low saturation voltage. This combination of high gain and low on-voltage drop allows designers to achieve substantial current boosting with minimal drive power and reduced thermal stress on switching elements.
Features
- The low collector-emitter saturation voltage.
- Complementary NPN – PNP transistors.
- High DC Current Gain: h<sub>FE</sub> = 2500 (typical) at I<sub>C</sub> = 4.0 A.
- Collector–Emitter Sustaining Voltage: V<sub>CEO(sus)</sub> = 100 V (min) at I<sub>C</sub> = 100 mA.
- Low Collector–Emitter Saturation Voltage: V<sub>CE(sat)</sub> ≤ 2.0 V (max) at I<sub>C</sub> = 3.0 A; ≤ 4.0 V (max) at I<sub>C</sub> = 5.0 A.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors: ensures fast turn-off and prevents latch-up.
- Pb-Free Package Available: compliant with lead-free soldering requirements (see ON Semiconductor Soldering & Mounting Techniques Reference Manual).
Technical Specifications:
| Parameter | Symbol | Value / Condition | Unit |
|---|---|---|---|
| Collector–Emitter Voltage: | VCEO | 100 | V |
| Collector–Base Voltage: | VCBO | 100 | V |
| Emitter–Base Voltage: | VEBO | 5 | V |
| Continuous Collector Current: | IC | 5 | A |
| Peak Collector Current: | ICM | 8 | A |
| Base Current: | IB | 0.12 | A |
| Total Power Dissipation (TC = 25 °C): | PTOT | 65 | W |
| Total Power Dissipation (TA = 25 °C): | PTOT | 2 | W |
| Junction–Case Thermal Resistance: | RθJC | 1.92 | °C/W |
| Junction–Ambient Thermal Resistance: | RθJA | 62.5 | °C/W |
| Operating/Storage Temperature: | TJ, Tstg | –65 to +150 | °C |
| Collector Cut-off Current: | ICEO | ≤ 0.5 (VCE = 50 V) | mA |
| Collector–Base Cut-off Current: | ICBO | ≤ 0.2 (VCB = 100 V) | mA |
| Emitter Cut-off Current: | IEBO | ≤ 2.0 (VEB = 5 V) | mA |
| Collector–Emitter Saturation Voltage: | VCE(sat) | ≤ 2.0 @ IC=3 A; ≤ 4.0 @ IC=5 A | V |
| Base–Emitter On Voltage: | VBE(on) | ≤ 2.5 @ IC = 3 A, VCE = 3 V | V |
| DC Current Gain: | hFE | ≥ 1000 @ IC = 0.5 A and 3 A | – |
| Small-Signal Current Gain: | hfe | ≥ 4 @ IC = 3 A, f = 1 MHz | – |
| Output Capacitance: | Cob | ≤ 200 (VCB = 10 V, f = 0.1 MHz) | pF |
Dimensions:
Applications:
- Linear and Switching Voltage Regulators.
- Relay Drivers.
- Lamp Drivers.
- Motor Drivers.
- Audio Amplifiers.
- Power Control Circuits.
- Solenoid Drivers.
- General-Purpose High Current Switching.
Package Include:
- 1x Tip122 5A 100V NPN Darlington Power Transistor TO-220