Toshiba 2SK1356 N-Channel Power MOSFET 900V 3A
The Toshiba 2SK1356 is a high-speed, high-voltage N-Channel power MOSFET designed for a wide range of power switching applications. This component is ideal for use in DC-DC converters, switch-mode power supplies, and motor control circuits. Its robust design ensures reliable performance with minimal lot-to-lot variations. The 2SK1356 is an enhancement-mode transistor, offering low on-resistance and fast switching speeds.
Features
- High Voltage: Capable of handling a drain-source voltage of up to 900V.
- High-Speed Switching: Designed for rapid switching applications to improve efficiency.
- Low On-Resistance: Minimizes power loss and heat generation with a static drain-source on-resistance of less than 4.3Ω
- Enhancement Mode: Features a low gate threshold voltage for easier control.
- Low Gate Charge: Contributes to faster switching and reduced driver power requirements.
Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | 900 V |
| Continuous Drain Current (Id) | 3 A |
| Power Dissipation (Pd) | 40 W |
| Gate-Source Voltage (Vgss) | ±30 V |
| Static Drain-Source On-Resistance (Rds(on)) | < 4.3 Ω |
| Operating Junction Temperature (Tj) | 150 °C |
| Rise Time (tr) | 55 ns |
| Drain-Source Capacitance (Cd) | 120 pF |
Applications
- Switching Power Supplies
- Motor Control
- Power Amplifiers
- Pulsed Power Applications
- Relay and Solenoid Driving
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