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YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247
YGW40N120T3 1200V, 40A trench field-stop IGBT in TO-247 with low VCE(sat), 10 μs short-circuit withstand, and integrated fast recovery diode for converters.
75.00 EGP
Buy NowYGW40N120T3 IGBT Power Transistor 1200V 40A TO-247
The YGW40N120T3 is a high-voltage trench field-stop IGBT designed for power conversion applications. Rated for a collector-emitter breakdown of 1200 V and a continuous collector current of 40 A (with higher short-term/current ratings under controlled thermal conditions), it targets demanding industrial environments where both blocking voltage and current capability are required. The device is offered in a TO-247 package for ease of mounting and thermal handling, making it suitable for discrete module builds and repair tasks.
Built on Trench-Stop technology, the YGW40N120T3 emphasizes tight parameter distribution and rugged, temperature-stable behavior. It provides a relatively low VCE(sat) at full rated current and shows a positive temperature coefficient in saturation voltage, which aids safe paralleling. The device also offers enhanced avalanche capability and a specified short-circuit withstand time (10 μs), important for protecting systems against transient faults.
Switching characteristics are optimized for medium-speed power conversion: gate charge and switching energies are specified at high voltage and current conditions, enabling designers to estimate drive losses and thermal budget. The integrated anti-parallel diode exhibits solid forward characteristics and controlled reverse-recovery behavior, making the part appropriate for frequency converters, motor drives, and other inverter applications where conduction and recovery performance matter.
Features:
- High breakdown voltage up to 1200 V.
- Trench-Stop technology for tight parameter distribution and high ruggedness.
- Short circuit withstand time: 10 μs.
- Low VCE(sat) for reduced conduction losses.
- Positive temperature coefficient in VCE(sat) facilitates safe paralleling.
- Enhanced avalanche capability.
Specifications:
| Parameter | Specification |
|---|---|
| Model / Package: | YGW40N120T3 – TO-247 |
| Collector-Emitter Breakdown Voltage (BVCES): | 1200 V |
| Collector Current (IC): | 40 A (TC = 100°C); DC up to 80 A at TC = 25°C (thermal limited) |
| Pulsed Collector Current (ICM): | 160 A (VGE = 15 V, tp limited by Tjmax) |
| VCE(sat): | 1.75 V (IC = 40 A, VGE = 15 V, Tj = 25°C); ~2.35 V at 150°C |
| Gate threshold (VGE(th)): | 5.2 – 6.5 V |
| Continuous Gate-Emitter Voltage: | ±20 V (transient ±30 V) |
| Short Circuit Withstand Time: | 10 μs (VGE = 15 V, VCE ≤ 600 V) |
| Power Dissipation (Tj = 25°C): | 416 W |
| Operating Junction Temperature (Tj): | −40 … +150 °C |
| Thermal Resistance, junction-to-case (IGBT): | 0.3 K/W |
| Diode forward voltage (VFM): | ~1.8 V (IF = 40 A) |
| Reverse recovery time (Trr): | ~350 ns (IF = 40 A, VR = 600 V, di/dt = 600 A/μs) |
| Gate charge (QG): | ~260 nC (VCC = 960 V, IC = 40 A, VGE = 15 V) |
| Input capacitance (Ciss): | ~6100 pF (VCE = 25 V, f = 1 MHz) |
| Switching times (inductive load): | td(on) ~80 ns; tr ~50 ns; td(off) ~180 ns; tf ~80 ns (conditions vary) |
Pinout Diagram:
Footprint Diagram:
Applications:
- Solar Power Inverters.
- Uninterruptible Power Supplies (UPS).
- Motor Drives and Industrial Controls.
- Welding Equipment.
- Induction Heating Systems.
- Switch-Mode Power Supplies (SMPS).
- Electric Vehicle Charging Stations.
Package Contents:
- 1x YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247
Datasheet
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