Description:
IRFP350 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Number of Channels: 1
- Transistor Polarity: N -Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id):16A
- Operating Temperature Range: -55 – 150°C
Specifications
| Product Attribute | Attribute Value |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 400 V |
| Id – Continuous Drain Current: | 16 A |
| Rds On – Drain-Source Resistance: | 300 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 190 W |
| Fall Time: | 47 ns |
| Rise Time: | 49 ns |
| Typical Turn-Off Delay Time: | 87 ns |
| Typical Turn-On Delay Time: | 16 ns |
