Description
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature : TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
- High Input Impedance
- Fast Switching: EOFF = 6.5 J/A
- Tighten Parameter Distribution
- This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Applications
Solar Inverter, Welder, UPS, PFC, Telecom, ESS
Specifications
| Product Attribute | Attribute Value |
| Product Category: | IGBT Transistors |
| Technology: | Si |
| Package/Case: | TO-247 |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Maximum Gate Emitter Voltage: | – 20 V, 20 V |
| Continuous Collector Current at 25 C: | 80 A |
| Pd – Power Dissipation: | 349 W |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Gate-Emitter Leakage Current: | +/- 400 nA |
| Product Type: | IGBT Transistors |
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