IRFP250 N-Channel MOSFET 200V 30A TO-247

IRFP250 N-Channel MOSFET 200V 30A TO-247

The IRFP250 N is a discrete N-channel MOSFET in a TO-247-3 package, built for demanding power-switching roles. Its high-voltage silicon die supports a 200 V drain-to-source rating, suitable for bridging low-voltage gate drives to high-voltage bus rails. The insulated mounting hole and metal tab facilitate efficient heat sinking, while the rugged leads ensure reliable mechanical stability in industrial power assemblies.

Using advanced trench-gate technology, the IRFP250N achieves a typical on-resistance of just 0.075 Ω at a 10 V gate drive. This low resistance minimizes conduction losses under high currents (30 A continuous at 25 °C) and reduces thermal stress. Its integrated fast-recovery body diode and high dV/dt capability enable clean commutation and high switching speeds, supporting efficient energy transfer in PWM converters.

Despite its high-power credentials, the IRFP250N remains easy to integrate. The standard TO-247 footprint—with clearly marked Gate, Drain, and Source pins—works with existing heatsink hardware. A 175 °C maximum junction rating offers thermal headroom, and the robust avalanche energy rating (315 mJ per pulse) protects against inductive transients without external snubbers.

Features:

• 200 V drain-to-source voltage.
• 30 A continuous drain current at 25 °C (21 A at 100 °C).
• Low on-resistance of 0.075 Ω at 10 V gate drive.
• Integrated fast-recovery body diode with 186 ns recovery time.
• Avalanche energy rating of 315 mJ per pulse.
• High dV/dt capability (≥ 8.6 V/ns).
• Junction temperature range from –55 °C to +175 °C.
• Easy paralleling of multiple devices in power stages.

Specifications:

Applications:

• Motor Drive Inverters.
• Switch-Mode Power Supplies.
• Uninterruptible Power Supplies.
• Induction Heating Systems.
• Welding Equipment.
• High-Frequency Converters.

Package Contents:

• 1x IRFP250 N-Channel MOSFET TO-247 (30A-200V-0.075Ω).

Documents:

• IRFP250 Datasheet.