IRF830 N-Channel MOSFET 500V 4.5A TO-220
The IRF830 is a high-voltage N-Channel enhancement-mode power MOSFET designed for applications requiring efficient switching of high-voltage loads. Featuring a maximum drain-to-source voltage of 500V and a continuous drain current rating of 4.5A, the device is widely used in power supplies, inverter circuits, motor control systems, and industrial switching applications. The TO-220 package provides excellent thermal performance and allows convenient mounting to a heatsink when higher power dissipation is required.
Features:
- N-Channel enhancement-mode power MOSFET.
- High drain-source voltage rating of 500V.
- Continuous drain current up to 4.5A.
- TO-220 through-hole package.
- Fast switching performance.
- Low gate charge characteristics.
Note: Complete technical details can be found at the IRF830 datasheet linked at the bottom of the page
Specifications:
| Parameter | Value |
|---|---|
| Part Number | IRF830 |
| Transistor Type | N-Channel MOSFET |
| Mounting Type | Through Hole |
| Package | TO-220 |
| Drain-Source Voltage (VDS) | 500V |
| Continuous Drain Current (ID) | 4.5A |
| Gate-Source Voltage (VGS) | ±20V |
| Drain-Source Resistance (RDS(on)) | 1.5Ω Max |
| Power Dissipation (PD) | 75W |
| Gate Charge (Qg) | 27nC Typical |
| Rise Time | 16ns Typical |
| Fall Time | 16ns Typical |
| Operating Temperature | -55°C to +150°C |
| Number of Pins | 3 |
Pin Configuration:
| Pin Number | Pin Name | Description |
| 1 | Source | Current flows out through Source (maximum 4.5A) |
| 2 | Gate | Controls the biasing of the MOSFET (Threshold voltage 10V) |
| 3 | Drain | Current flows in through Drain |
Applications:
- Switching high power devices
- Inverter Circuits
- DC-DC Converters
- Control speed of motors
- LED dimmers or flashers
- High Speed switching applications
Package Include:
1x IRF830 N-Channel MOSFET 500V 4.5A TO-220