IRF540 N-Channel Power MOSFET 100V 33A TO-220
The IRF540 N-Channel Power MOSFET TO-220 (100V-0.044Ω-33A) is an advanced enhancement-mode silicon-gate power field-effect transistor designed for high-efficiency power switching and amplification applications. this device combines low on-state resistance with fast switching speeds to minimize power losses and heat generation in demanding circuits.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Specifications:
| Number of Channels |
1 Channel |
| Transistor Polarity |
N-Channel |
| Drain-Source Breakdown Voltage (Vds) |
100V |
| Continuous Drain Current (Id) |
33A |
| Drain-Source Resistance (Rds On) |
44mOhms |
| Gate-Source Voltage (Vgs) |
20V |
| Gate Charge (Qg) |
71 nC |
| Operating Temperature Range |
-55 – 175°C |
| Power Dissipation (Pd) |
130W |
Dimension:
Foot Print:
Application:
- DC-DC converters for efficient power regulation in electronics.
- Motor control systems in robotics and automotive applications.
- Switching power supplies for high-current loads.
- Battery management and charging circuits in portable devices.
- Inverters and amplifiers in audio and renewable energy systems.
Package Include:
- 1x IRF540 N-Channel Power MOSFET 100V 33A TO-220.
Datasheet:
