2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92
The 2N7000 is an N-channel enhancement mode field effect transistor produced using high cell density DMOS technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.
This device is a voltage-controlled small signal switch and is particularly suited for low-voltage, low-current applications. The datasheet specifies the 2N7000 for a maximum continuous drain current of 200mA and a maximum pulsed drain current of 500mA. It is supplied in a TO-92 package.
Features
- N-channel enhancement mode field effect transistor
- High-density cell design for low RDS(ON)
- Voltage-controlled small signal switch
- Rugged and reliable construction
- High saturation current capability
- Fast switching performance
- 60V drain-source voltage rating
- 200mA continuous drain current
- 500mA pulsed drain current
- 400mW maximum power dissipation
- TO-92 package
Specifications
| Specification | Value |
|---|---|
| Part Number | 2N7000 |
| Device Type | N-Channel Enhancement Mode Field Effect Transistor |
| Drain-Source Voltage (VDSS) | 60 V |
| Drain-Gate Voltage (VDGR) | 60 V |
| Gate-Source Voltage, Continuous (VGSS) | ±20 V |
| Gate-Source Voltage, Non-Repetitive (tp < 50 µs) | ±40 V |
| Maximum Drain Current, Continuous (ID) | 200 mA |
| Maximum Drain Current, Pulsed (ID) | 500 mA |
| Maximum Power Dissipation (PD) | 400 mW |
| Power Derating Above 25°C | 3.2 mW/°C |
| Operating and Storage Temperature (TJ, TSTG) | -55°C to +150°C |
| Maximum Lead Temperature for Soldering | 300°C for 10 seconds |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 312.5°C/W |
| Drain-Source Breakdown Voltage (BVDSS) | 60 V min. |
| Zero Gate Voltage Drain Current (IDSS) | 1 µA max. at VDS = 48 V, VGS = 0 V |
| IDSS at TJ = 125°C | 1 mA max. |
| Gate-Body Leakage, Forward (IGSSF) | 10 nA max. |
| Gate-Body Leakage, Reverse (IGSSR) | -10 nA max. |
| Gate Threshold Voltage (VGS(th)) | 0.8 V min., 2.1 V typ., 3 V max. |
| Static Drain-Source On-Resistance (RDS(ON)) | 1.2 Ω typ., 5 Ω max. at VGS = 10 V, ID = 500 mA |
| RDS(ON) at TJ = 125°C | 1.9 Ω typ., 9 Ω max. |
| RDS(ON) at VGS = 4.5 V, ID = 75 mA | 1.8 Ω typ., 5.3 Ω max. |
| Drain-Source On-Voltage (VDS(ON)) | 0.6 V typ., 2.5 V max. at VGS = 10 V, ID = 500 mA |
| VDS(ON) at VGS = 4.5 V, ID = 75 mA | 0.14 V typ., 0.4 V max. |
| On-State Drain Current (ID(ON)) | 75 mA min., 600 mA typ. at VGS = 4.5 V, VDS = 10 V |
| Forward Transconductance (gFS) | 100 mS min., 320 mS typ. |
| Input Capacitance (Ciss) | 20 pF typ., 50 pF max. |
| Output Capacitance (Coss) | 11 pF typ., 25 pF max. |
| Reverse Transfer Capacitance (Crss) | 4 pF typ., 5 pF max. |
| Turn-On Time (ton) | 10 ns |
| Turn-Off Time (toff) | 10 ns |
| Package | TO-92 |
Applications
The 2N7000 is particularly suited for low-voltage, low-current applications such as:
- Small servo motor control
- Power MOSFET gate drivers
- General switching applications
- Voltage-controlled small signal switching
- Low-current power control circuits
Package Content
- 1 x 2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92