IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247

IRFP240 N-Channel Power MOSFET Transistor featuring 200V drain-source voltage, 18A drain current, low 0.18Ω on-resistance, and TO-247 package for high-power switching applications.

30.00 EGP

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IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247

The IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247V is a high-performance N-channel enhancement-mode power MOSFET designed for demanding power switching and amplification applications. It features a maximum drain-to-source voltage of 200V, a continuous drain current of 18A, and a low maximum drain-to-source on-resistance of 0.18Ω, providing excellent efficiency and low conduction losses. The TO-247 package offers superior thermal performance and is ideal for high-power circuits requiring efficient heat dissipation.

Features:
  • N-Channel enhancement-mode power MOSFET.
  • Maximum drain-to-source voltage of 200V.
  • Continuous drain current up to 18A.
  • Low on-state resistance of 0.18Ω(Max).
  • Fast switching performance.
  • Dynamic dV/dt rated.
  • Repetitive avalanche rated.
Specifications:
Parameter Value
Part Number IRFP240
Transistor Type N-Channel Power MOSFET
Technology Enhancement Mode MOSFET
Package TO-247AC
Mounting Type Through-Hole
Drain-to-Source Voltage (VDS) 200V
Continuous Drain Current (ID) 18A
Pulsed Drain Current (IDM) 80A
Drain-to-Source On-Resistance (RDS(on)) 0.18Ω(Max)
Gate-to-Source Voltage (VGS) ±20V
Gate Threshold Voltage (VGS(th)) 2V to 4V
Power Dissipation (PD) 150W
Total Gate Charge (Qg) 70nC(Max)
Operating Junction Temperature -55°C to +150°C
Package Style TO-247AC
Pin Configuration:

Applications:
  • Switching power supplies.
  • DC-DC converters.
  • Motor drive circuits.
  • Inverters.
  • Uninterruptible power supplies (UPS).
  • Battery charging systems.
  • High-power audio amplifiers.
  • Industrial automation equipment.
  • Power control circuits.
  • General-purpose high-power switching applications.
Package Include:

1x IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247

Datasheet

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