IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220
The IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220 is a high-voltage P-channel enhancement-mode power MOSFET designed for efficient switching and power management applications. It features a maximum drain-to-source voltage of 200V, a continuous drain current of 6.5A, and a maximum on-state resistance of 0.8Ω, making it suitable for medium-power switching circuits requiring high voltage capability. The industry-standard TO-220 package provides excellent thermal performance and allows easy heatsink mounting for improved power dissipation.
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- P-channel
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specifications:
| Parameter | Value |
|---|---|
| Part Number | IRF9630 |
| Transistor Type | P-Channel Power MOSFET |
| Technology | Enhancement Mode MOSFET |
| Package | TO-220AB |
| Mounting Type | Through-Hole |
| Drain-to-Source Voltage (VDS) | -200V |
| Continuous Drain Current (ID) | -6.5A |
| Pulsed Drain Current (IDM) | -26A |
| Drain-to-Source On-Resistance (RDS(on)) | 0.8Ω(Max) |
| Gate-to-Source Voltage (VGS) | ±20V |
| Gate Threshold Voltage (VGS(th)) | -2V to -4V |
| Power Dissipation (PD) | 74W |
| Total Gate Charge (Qg) | 29nC(Max) |
| Operating Junction Temperature | -55°C to +150°C |
| Package Style | TO-220AB |
Pin Configuration:
Applications:
- High-side power switching.
- Switching power supplies.
- DC motor control.
- Battery-powered equipment.
- Load switching circuits.
- Industrial control systems.
- Power converters.
- Inverters.
- Automotive electronic applications.
- General-purpose power management circuits.
Package Include:
1x IRF9630 P-Channel Power MOSFET Transistor 200V, 6.5A, 0.8Ω TO-220