| Manufacturer | Wuxi NCE Power Semiconductor |
| Mfr. Part # | NCE30D2519K |
| Package | TO-252-4 |
| Datasheet | Wuxi NCE Power Semiconductor NCE30D2519K |
| Description | 30V 8.5mΩ@10V,7A 21W 2V@250uA 90pF@15V 1PCSN-Channel&1PCSP-Channel 450pF@15V 9.5nC@10V -55℃~+175℃@(Tj) TO-252-4 MOSFETs ROHS |
Specifications:
| Attribute | Value |
| Category | Transistors/MOSFETs |
| Datasheet | Wuxi NCE Power Semiconductor NCE30D2519K |
| RoHS | |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | – |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.5mΩ@10V,7A |
| Power Dissipation (Pd) | 21W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF@15V |
| Type | 1PCSN-Channel&1PCSP-Channel |
| Input Capacitance (Ciss@Vds) | 450pF@15V |
| Total Gate Charge (Qg@Vgs) | 9.5nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |
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