General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Features
- 3.6A, 600V, RDS(on) = 1.5Ω @VGS = 10 V
- Low gate charge ( typical 20 nC)
- Low Crss ( typical 10 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Parameters
| Symbol | Parameter | FQPF6N60 | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current – Continuous (TC = 25°C)
– Continuous (TC = 100°C) |
3.6 | A |
| 2.3 | A | ||
| IDM | Drain Current – Pulsed (Note 1) | 14.4 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 440 | mJ |
| IAR | Avalanche Current (Note 1) | 3.6 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns |
| PD | Power Dissipation (TC = 25°C)
– Derate above 25°C |
44 | W |
| 0.35 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes,
1/8″ from case for 5 seconds |
300 | °C |
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