| Manufacturer | FOSAN |
| Mfr. Part # | BC856B |
| Package | SOT-23(TO-236) |
| Datasheet | FOSAN BC856B |
| Description | 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236) Bipolar Transistors – BJT ROHS |
Specifications
| Attribute | Value |
| Category | Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
| Datasheet | FOSAN BC856B |
| RoHS | |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 65V |
| Power Dissipation (Pd) | 225mW |
| DC Current Gain (hFE@Ic, Vce) | 290@2mA,5V |
| Collector Current (Ic) | 100mA |
| Transition Frequency (fT) | 100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA,500uA |
| Transistor Type | PNP |
| Operating Temperature | -55℃~+150℃@(Tj) |
