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BC856B 3B Bipolar Transistors – BJT SMD 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236)

2.00 EGP

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<100
2.00 EGP
100 - 249
1.80 EGP
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1.70 EGP
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1.60 EGP
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1.40 EGP
× BC856B 3B Bipolar Transistors - BJT SMD 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236)
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Availability: In Stock
SKU:3496300082063
Manufacturer FOSAN
Mfr. Part # BC856B
Package SOT-23(TO-236)
Datasheet FOSAN BC856B
Description 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236) Bipolar Transistors – BJT ROHS
Specifications
Attribute Value
Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT
Datasheet FOSAN BC856B
RoHS
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 65V
Power Dissipation (Pd) 225mW
DC Current Gain (hFE@Ic, Vce) 290@2mA,5V
Collector Current (Ic) 100mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@10mA,500uA
Transistor Type PNP
Operating Temperature -55℃~+150℃@(Tj)

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