Specifications:
- Type Designator: BD709
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation Tc ≤ 25°C : 75 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Collector Current |Ic|: 12 A
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 3 MHz
