BC557 BJT PNP Epitaxial Silicon Transistor -50V -100 TO-92
The BC557 is a PNP epitaxial silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its compact TO-92 package and reliable electrical characteristics make it a popular choice for electronic circuits requiring low-current signal processing, load switching, and analog amplification. The device is widely used in consumer electronics, educational projects, and industrial control systems.
Featuring good current gain, low noise performance, and stable operation, the BC557 is suitable for audio preamplifiers, sensor conditioning circuits, driver stages, and logic interfacing. As the complementary counterpart to the BC547 NPN transistor family, it is frequently paired with NPN transistors in push-pull amplifier stages and switching circuits.
Features:
- General-purpose PNP transistor.
- Suitable for switching applications.
- Suitable for signal amplification.
- Low-noise operation.
- High current gain.
- Compact through-hole package.
- Reliable and stable performance.
- Easy integration into electronic circuits.
- Ideal for analog and digital applications.
- Compatible with breadboard prototyping.
- Suitable for educational and hobby projects.
Specifications:
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector Cut-Off Current | VCB=−30 V, IE=0 | nA | |||
| hFE | DC Current Gain | VCE=−5 V, IC=−2 mA | 110 | 800 | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=−10 mA, IB=−0.5 mA | -90 | -300 | mV | |
| IC=−100 mA, IB=−5 mA | -650 | mV | ||||
| VBE(sat) | Collector-Base Saturation Voltage | IC=−10 mA, IB=−0.5 mA | mV | |||
| IC=−100 mA, IB=−5 mA | mV | |||||
| VBE(on) | Base-Emitter On Voltage | VCE=−5 V, IC=−2 mA | -600 | -660 | -750 | mV |
| VCE=−5 V, IC=−10 mA | mV | |||||
| fT | Current Gain Bandwidth Product | VCE=−5 V, IC=−10 mA, f=10 MHz | MHz | |||
| Cob | Output Capacitance | VCB=−10 V, IE=0, f=1 MHz | pF | |||
| NF | Noise Figure | VCE=−5 V, IC=−200 μA, f=1 kHz, RG=2 kΩ | 2 | 10 | dB | |
| VCE=−5 V, IC=−200 μA, RG=2 kΩ, f=30 to 15000 MHz | 1.2 | 4.0 | dB | |||
| VCE=−5 V, IC=−200 μA, RG=2 kΩ, f=30 to 15000 MHz | 1.2 | 2.0 | dB |
Pin Configuration:
|
Pin Number |
Pin Name |
Description |
|
1 |
Collector |
Current flows in through collector |
|
2 |
Base |
Controls the biasing of transistor |
|
3 |
Emitter |
Current Drains out through emitter |
Applications:
- Signal amplification circuits.
- Audio preamplifiers.
- Low-current switching circuits.
- Sensor interface circuits.
- Microcontroller interfacing.
- Relay driver circuits.
- LED switching applications.
- Push-pull amplifier stages.
- Educational electronics projects.
- Consumer electronic devices.
- Voltage level shifting circuits.
- Analog signal conditioning.
Package Includes:
- 1x BC557 BJT PNP Epitaxial Silicon Transistor -50V -100 TO-92