Description

The 4116 is a new generation MOS dynamic random access memory circuit organized as 16,384 words by, 1 bit. As a state-of-the-art MOS memory device, the 4116 (16K advanced circuit techniques are designed to provide wide operating margins, both internally and to the system in speed and power previously seen only in MOSTEK’s high-performance MK 4027 (4K RAM).

This process, coupled with the use of a single transistor dynamic storage cell, provides the maximum possible circuit density and reliability while maintaining high-performance double-poly, N-channel silicon gate capability. out, including sense amplifiers, assures that power The use of dynamic circuitry through dissipation is minimized without any sacrifice in speed or operating margin. These factors combine to make the 4116 a truly superior

4116 Pinout

4116 Pin Configuration

Pin No	Pin Name	Description
1	VBB	Supply Voltage
2	DIN	Data In
3	WRITE’	Read/Write Input
4	RAS’	Row Address Strobe
5	A0	Address Pin 0
6	A2	Address Pin 2
7	A1	Address Pin 1
8	VDD	Supply Voltage
9	VCC	Power Voltage
10	A5	Address Pin 5
11	A4	Address Pin 4
12	A3	Address Pin 3
13	A6	Address Pin 6
14	D OUT	Data Out
15	CAS’	Column Address Strobe
16	VSS	Ground Pin

4116 Key Feature

Recognized industry-standard 16-pin configuration from MOSTEK
200ns access time, 375ns cycle (4116-3)
10% tolerance on all power supplies (+12V, +5V)
Low power: 462mW active, 20mW standby (max)
Output data controlled by CAS and unlatched at the end of the cycle to allow two-dimensional chip selection and extended page boundary
Common I/O capability using “early write” operation
Read-Modify-Write, RAS-only refresh, and Page-mode capability
All inputs are TTL compatible, low capacitance, and protected against static charge
128 refresh cycles