Specifications:
- Type Designator: 2SD2396
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 30 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 40 MHz
- Collector Capacitance (Cc): 55 pF
- Forward Current Transfer Ratio (hFE), MIN: 400
- Package: TO-220F
