Specifications:
- Type Designator: 2SC3152
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 80 W
- Maximum Collector-Base Voltage |Vcb|: 900 V
- Maximum Collector-Emitter Voltage |Vce|: 800 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 15 MHz
- Collector Capacitance (Cc): 60 pF
- Forward Current Transfer Ratio (hFE), MIN: 10
