G50N60 IGBT Transistor 600V 50A 250W TO264

The G50N60 IGBT Transistor is a high-performance component designed by Fairchild Semiconductor, specifically engineered for high-voltage and high-current applications. As an Insulated Gate Bipolar Transistor (IGBT), it combines the best features of both MOSFET and bipolar transistor technologies, offering efficient switching performance.

This IGBT is designed to deliver superior performance with a short-circuit rated structure. It supports applications that require robust performance under challenging conditions such as motor control, uninterruptible power supplies (UPS), and general inverters. It features low conduction losses and high switching speed, ensuring efficient operation.

The G50N60’s design offers a balanced combination of high voltage tolerance, ruggedness against short circuits, and excellent thermal management. It achieves a balance between performance and reliability, making it an ideal choice for power management in various industrial systems.

Features:

50 A, 600 V rating at 100°C junction temperature.
Low saturation voltage (VCE(sat) = 2.2V at IC = 50A).
Short-circuit withstand time of 10 µs.
High-speed switching capability.
High input impedance.
Rated for high-speed operation and rugged against short circuits.

Specifications:

Parameter	Value
Collector-Emitter Voltage (VCE):	600 V
Gate-Emitter Voltage (VGE):	± 20 V
Collector Current @ TC = 25°C:	80 A
Collector Current @ TC = 100°C:	50 A
Pulsed Collector Current (ICM):	150 A
Power Dissipation @ TC = 25°C:	250 W
Junction Temperature (TJ):	-55 to +150°C
Storage Temperature Range:	-55 to +150°C
Gate Charge (Qg):	145 – 210 nC