2SC1506 High‑Voltage Amplifier Transistor NPN 300V 200mA TO‑66
The 2SC1506 High‑Voltage Amplifier Transistor NPN 300 V 200 mA TO‑66 is a triple‑diffused silicon device engineered for color television chroma and sound output stages. Housed in a rugged TO‑66 package, it delivers high breakdown voltages and excellent frequency response for reliable amplification in demanding line‑powered applications.
Features
- High collector–base and collector–emitter breakdown voltages for robust operation.
- Low collector–base capacitance for improved high‑frequency performance.
- Gain bandwidth product (fT) up to 80 MHz at typical operating currents.
- Triple‑diffused construction ensures consistent gain and low noise.
- Wide operating junction temperature range for thermal resilience.
Specifications
| Parameter | Value |
|---|---|
| Collector–Base Voltage (VCBO) | 300 V |
| Collector–Emitter Voltage (VCEO) | 300 V |
| Emitter–Base Voltage (VEBO) | 7.0 V |
| Collector Current (IC) | 200 mA |
| Power Dissipation (PTa=25 °C) | 1.2 W |
| Power Dissipation (PTc=25 °C) | 15 W |
| DC Current Gain (hFE) | 40–200 @ VCE=10 V, IC=10 mA |
| Gain Bandwidth (fT) | 50–80 MHz @ VCE=30 V, IE=10 mA |
| Collector–Base Capacitance (Cob) | 4.5 pF @ VCB=50 V, IE=0 mA |
| Operating Junction Temperature | –55 °C to +150 °C |
| Package | TO‑66 |
Package Dimensions
Unit: mm
Applications
- Chroma and sound output amplifiers in color television receivers.
- High‑voltage switching and signal amplification in line‑powered electronics.
- General‑purpose high‑frequency, high‑voltage amplification.
- Industrial instrumentation requiring robust high‑voltage transistors.
Package Contents
- 1x 2SC1506 High‑Voltage Amplifier Transistor NPN 300 V 200 mA TO‑66.
