IRF450 N-Channel MOSFET Transistor 500V 13A TO-3
The IRF450 is a through-hole, TO-3 (TO-204AA) packaged, high-voltage N-channel power MOSFET built on HEXFET/Hermetic technology for demanding power applications. It is designed to handle high drain-to-source voltages while providing relatively low on-resistance for its class. The TO-3 metal can/package and rugged construction give excellent thermal coupling and avalanche/dv/dt robustness, making the device suitable for high-energy pulses, switching power supplies, motor controllers, and audio output stages where both high voltage and reliable power handling are required. The device is often used where a hermetic, high-voltage discrete is preferred over modern surface packages.
Features:
- High voltage, rugged MOSFET construction (hermetic/TO-3 option).
- Low input capacitance for faster switching.
- Robust avalanche and dv/dt capability (good inductive load performance).
- Easy paralleling for increased current handling.
- Simple gate drive requirements (standard MOSFET drive).
- Extended safe-operating-area (SOA) characteristics.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage: | 500V |
| Continuous Drain Current: | 13A |
| Drain-Source On Resistance: | 0.4Ω |
| Gate Threshold Voltage: | 2 – 4V |
| Maximum Gate-Source Voltage: | ±20V |
| Total Gate Charge: | 120nC |
| Package: | TO-3 |
| Channel Type: | N-Channel |
Pinout:
| Pin / Case | Function |
|---|---|
| Case (Metal Body) | Drain |
| Pin 1 | Source |
| Pin 2 | Gate |
Applications:
- Switching power supplies.
- Motor drives and motor controllers.
- High-voltage DC switching circuits.
- Audio power amplifiers.
- Industrial power control systems.
Packages:
- 1x IRF450 N-Channel MOSFET Transistor 500V 13A TO-3.