IRF450 N-Channel MOSFET Transistor 500V 13A TO-3

IRF450 N-Channel MOSFET Transistor 500V 13A TO-3

The IRF450 is a through-hole, TO-3 (TO-204AA) packaged, high-voltage N-channel power MOSFET built on HEXFET/Hermetic technology for demanding power applications. It is designed to handle high drain-to-source voltages while providing relatively low on-resistance for its class. The TO-3 metal can/package and rugged construction give excellent thermal coupling and avalanche/dv/dt robustness, making the device suitable for high-energy pulses, switching power supplies, motor controllers, and audio output stages where both high voltage and reliable power handling are required. The device is often used where a hermetic, high-voltage discrete is preferred over modern surface packages.

Features:

• High voltage, rugged MOSFET construction (hermetic/TO-3 option).
• Low input capacitance for faster switching.
• Robust avalanche and dv/dt capability (good inductive load performance).
• Easy paralleling for increased current handling.
• Simple gate drive requirements (standard MOSFET drive).
• Extended safe-operating-area (SOA) characteristics.

Specifications:

Pinout:

Applications:

• Switching power supplies.
• Motor drives and motor controllers.
• High-voltage DC switching circuits.
• Audio power amplifiers.
• Industrial power control systems.

Packages:

• 1x IRF450 N-Channel MOSFET Transistor 500V 13A TO-3.

Documents:

• IRF450 Datasheet