MK6264UN-120 8K X 8 64k STANDARD SRAM 120ns IC DIP-28

MK6264UN-120 8K X 8 64k STANDARD SRAM 120ns IC DIP-28

The MK6264UN-120 is a high-performance 65,536-bit static RAM organized as 8K x 8 bits, fabricated using SGS-Thomson’s low-power CMOS technology. Its fully static operation eliminates the need for external clocks or timing strobes, simplifying the integration into microprocessor-based systems by allowing equal address access and cycle times.

Housed in a standard 330 mil SOIC package, this device features a sophisticated control logic scheme utilizing dual Chip Enable pins (E1 active low, E2 active high) for flexible memory expansion and power-down capabilities. An Output Enable pin provides high-speed tristate control of the common I/O data bus, allowing for efficient bus management during read/write cycles.

The device operates from a single +5V supply and is fully TTL compatible, ensuring seamless interfacing with standard logic families. The control logic is defined by the states of the Write Enable, Output Enable, and the two Chip Enable pins, enabling distinct read, write, and standby modes to optimize system performance.

Features:

• 8K × 8-bit organization providing 64K-bit static RAM memory capacity.
• 120 ns address access time for fast data operations.
• Fully static operation with no external clock or refresh required.
• Equal access and cycle times for consistent performance.
• Low power CMOS technology design.
• Low VCC data retention capability around 2V.
• CMOS and TTL compatible inputs and outputs.
• Three-state output for easy bus interfacing.
• Single +5V power supply operation.
• Available in standard 28-pin package formats.

Specifications:

Pinout Configurations:

Applications:

• Embedded Systems Memory.
• Microprocessor-Based Systems.
• Industrial Control Equipment.
• Data Buffer Storage.
• Instrumentation Systems.
• Communication Devices.

Package Contents:

• 1x MK6264UN-120 8K X 8 64k STANDARD SRAM 120ns IC DIP-28

Datasheet