Name: μPD416C-3 Dynamic RAM 16K 16 Pin DIP
SKU: 3496300140268
Price: 75.00 EGP
Availability: InStock

μPD416C-3 Dynamic RAM 16K 16 Pin DIP

The μPD416C-3 is a Dynamic NMOS Random Access Memory (DRAM) integrated circuit manufactured by NEC. Organized as 16,384 words by 1 bit, this memory device was developed to provide high storage density while maintaining a compact package size. Utilizing a double-poly-layer N-channel silicon gate process, the μPD416C-3 achieves excellent memory density and reliable operation for digital memory systems.

Features:

16,384 × 1-bit Dynamic NMOS RAM organization.
Standard 16-pin DIP package.
High memory density design.
Multiplexed address inputs.
150ns access time.
Supports Read-Modify-Write operation.
Supports RAS-only refresh cycles.
Page Mode operation capability.

Specifications:

Parameter	Value
Organization	16384Words x 1Bit.
Package Type	16-Pin DIP (Ceramic or Plastic).
Access Time	150ns.
Read/Write Cycle Time	375ns.
Read-Modify-Write Cycle Time	375ns.
Power Supply VDD	+12V ± 10%.
Power Supply VCC	+5V ± 10%.
Power Supply VBB	-5V ± 10%.
Power Supply VSS	0V.
Active Power Dissipation	462mW (MAX).
Standby Power Dissipation	40mW (MAX).
Operating Temperature	0°C to +70°C.
Storage Temperature	-55°C to +150°C.
Input Capacitance (A0-A6, DIN)	5pF (MAX).
Input Capacitance (RAS, CAS, WRITE)	10pF (MAX).
Output Capacitance (DOUT)	7pF (MAX).
Refresh Requirement	128 Cycles Every 2ms.
Input High Voltage (RAS, CAS, WRITE)	2.7V to 7.0V.
Input High Voltage (Other Inputs)	2.4V to 7.0V.
Input Low Voltage	-1.0V to 0.8V.
Output High Voltage	2.4V (MIN).
Output Low Voltage	0.4V (MAX).