2SC1815 NPN TO-92 Bipolar Transistors – BJT
2SC1815 is a silicon NPN TO‑92 transistor offering high gain, fast switching up to 80 MHz, and low saturation voltage for versatile amplification and switching.
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2SC1815 NPN TO-92 Bipolar Transistors – BJT
The 2SC1815 is a silicon NPN epitaxial‑planar transistor in a TO‑92 package, designed primarily for general‑purpose amplifier and low‑power switching applications.
Features
- Epitaxial‑planar process for consistent performance
- Low saturation voltage (VCE(sat) ≈ 0.25 V @ IC=100 mA)
- High transition frequency (fT up to 80 MHz)
- Standard TO‑92 package for easy through‑hole mounting
- Wide temperature range: –55 °C to +125 °C
Specifications
Absolute Maximum Ratings (TA = 25 °C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector–Base Voltage | VCBO | 60 | V |
| Collector–Emitter Voltage | VCEO | 50 | V |
| Emitter–Base Voltage | VEBO | 5.0 | V |
| Continuous Collector Current | IC | 150 | mA |
| Power Dissipation | PD | 400 | mW |
| Junction & Storage Temperature | TJ, Tstg | –55 to +125 | °C |
| Thermal Resistance (J–A) | ΘJA | 250 | °C/W |
Key Electrical Characteristics (TA = 25 °C)
| Parameter | Test Condition | Min | Typ/Max | Unit |
|---|---|---|---|---|
| Leakage Current, ICBO | VCB = 60 V | 100 | nA | |
| Leakage Current, ICEO | VCE = 50 V | 100 | nA | |
| VCE(sat) | IC=100 mA, IB=10 mA | 0.25 | V | |
| DC Current Gain, hFE | VCE=6 V, IC=2 mA | 70 | 700 | |
| Transition Frequency, fT | VCE=10 V, IC=1 mA, f=30 MHz | 80 | MHz | |
| Base–Emitter On‑Voltage, VBE(on) | IC=310 mA | 1.45 | V |
Applications
- General‑purpose audio and RF amplification
- Low‑power switching circuits
- Pre‑amplifier stages in signal processing
- Oscillator and driver stages in consumer electronics
DataSheet
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