Specifications:
- Type Designator: 2SK1096
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 30 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Continuous Drain Current |Id|: 13 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm
- Package: TO-220F
