Specifications:
- Type Designator: 2SK1160
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Pd – Maximum Power Dissipation: 60 W
- |Vds| – Maximum Drain-Source Voltage: 500 V
- |Vgs| – Maximum Gate-Source Voltage: 30 V
- |Vgs(off)| – Minimum Gate-to-Source Cutoff Voltage: 2 V
- |Id| – Maximum Drain Current: 8 A
- Tj – Maximum Junction Temperature: 150 °C
- tr – Rise Time: 55 nS
- Coss – Output Capacitance: 340 pF
- Rds – Maximum Drain-Source On-State Resistance: 0.8 Ohm
- Package: TO-220F
